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Uspekhi Fizicheskikh Nauk, 1960, Volume 72, Number 3, Pages 495–520
DOI: https://doi.org/10.3367/UFNr.0072.196011d.0495 (Mi ufn12390) 		 
This article is cited in 325 scientific papers (total in 325 papers)

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Growth of silicon crystals free from dislocations

W. С. Dash
Full-text PDF (6156 kB) Citations (325)
DOI: https://doi.org/10.3367/UFNr.0072.196011d.0495
English version:
J. Appl. Phys., 1959, Volume 30, Pages 459–474
DOI: https://doi.org/10.1063/1.1702390
Document Type: Article
Language: Russian
Citation: W. С. Dash, “Growth of silicon crystals free from dislocations”, UFN, 72:3 (1960), 495–520; J. Appl. Phys., 30 (1959), 459–474
Citation in format AMSBIB
\Bibitem{Das60}
\by W.~С.~Dash
\paper Growth of silicon crystals free from dislocations
\jour UFN
\yr 1960
\vol 72
\issue 3
\pages 495--520
\mathnet{http://mi.mathnet.ru/ufn12390}
\crossref{https://doi.org/10.3367/UFNr.0072.196011d.0495}
\transl
\jour J. Appl. Phys.
\yr 1959
\vol 30
\pages 459--474
\crossref{https://doi.org/10.1063/1.1702390}
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    • This publication is cited in the following 325 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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