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Uspekhi Fizicheskikh Nauk, 1964, Volume 82, Number 2, Pages 325–386
DOI: https://doi.org/10.3367/UFNr.0082.196402f.0325 (Mi ufn11907) 		 
This article is cited in 32 scientific papers (total in 32 papers)

REVIEWS OF TOPICAL PROBLEMS

Herstellung und eigenschaften reiner halbleiteroberflächen

G. Håiland
Full-text PDF (5537 kB) Citations (32)
DOI: https://doi.org/10.3367/UFNr.0082.196402f.0325
English version:
Fortschr. Phys., 1961, Volume 9, Issue 8, Pages 393–454
DOI: https://doi.org/10.1002/PROP.19610090802
Document Type: Article
UDC: 537.311.33
Language: Russian
Citation: G. Håiland, “Herstellung und eigenschaften reiner halbleiteroberflächen”, UFN, 82:2 (1964), 325–386; Fortschr. Phys., 9:8 (1961), 393–454
Citation in format AMSBIB
\Bibitem{åil64}
\by G.~Håiland
\paper Herstellung und eigenschaften reiner halbleiteroberfl\"achen
\jour UFN
\yr 1964
\vol 82
\issue 2
\pages 325--386
\mathnet{http://mi.mathnet.ru/ufn11907}
\crossref{https://doi.org/10.3367/UFNr.0082.196402f.0325}
\transl
\jour Fortschr. Phys.
\yr 1961
\vol 9
\issue 8
\pages 393--454
\crossref{https://doi.org/10.1002/PROP.19610090802}
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    • This publication is cited in the following 32 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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