B. A. Volkov, B. G. Idlis, M. Sh. Usmanov, “Interface states in inhomogeneous semiconductor structures”, UFN, 165:7 (1995), 799–810; Phys. Usp., 38:7 (1995), 761

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Uspekhi Fizicheskikh Nauk, 1995, Volume 165, Number 7, Pages 799–810
DOI: https://doi.org/10.3367/UFNr.0165.199507e.0799 (Mi ufn1100)

This article is cited in 30 scientific papers (total in 30 papers)

TO THE 40TH ANNIVERSARY OF THE PROKHOROV GENERAL PHYSICS INSTITUTE, RUSSIAN ACADEMY OF SCIENCES

Interface states in inhomogeneous semiconductor structures

B. A. Volkov, B. G. Idlis, M. Sh. Usmanov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Full-text PDF (1868 kB) Citations (30)

DOI: https://doi.org/10.3367/UFNr.0165.199507e.0799

Abstract: The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems.

Received: June 1, 1995

English version:
Physics–Uspekhi, 1995, Volume 38, Issue 7, Pages 761–771
DOI: https://doi.org/10.1070/PU1995v038n07ABEH000097

Bibliographic databases:

Document Type: Article

PACS: 73.20.Dx, 73.40.Lq, 71.28.+d

Language: Russian

Citation: B. A. Volkov, B. G. Idlis, M. Sh. Usmanov, “Interface states in inhomogeneous semiconductor structures”, UFN, 165:7 (1995), 799–810; Phys. Usp., 38:7 (1995), 761–771

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This publication is cited in the following 30 articles:

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