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Teplofizika vysokikh temperatur, 1976, Volume 14, Issue 3, Pages 580–585 (Mi tvt9427)  
Heat Transfer, Fluid Mechanics, Gas and Plasma

Crystallization of semiconductors in a constant electric field

D. K. Belashchenkoa, A. M. Orlovb, S. P. Orlovab

a Moscow Institute of Steel and Alloys
b Institute of Non-Ferrous Metals and Materials Science, Siberian Federal University
Full-text PDF (224 kB)
Abstract: An investigation was made of the effect of the density of a direct electric current on the crystallization process of complex semiconductors based on tellurium. Processes of the crystallization of semiconductors in an electrical field are discussed. The dependences found are in good agreement with experiment. It is noted that analysis of the experimental data using the proposed equations permits a more exact evaluation of the values of the thermoelectric parameters at the phase interface, in comparison with the well-known Bardeen relationships.
Received: 28.09.1974
Bibliographic databases:
Document Type: Article
UDC: 536.42: [621.315.592:669.2/8]
Language: Russian
Citation: D. K. Belashchenko, A. M. Orlov, S. P. Orlova, “Crystallization of semiconductors in a constant electric field”, TVT, 14:3 (1976), 580–585; High Temperature, 14:3 (1976), 516–520
Citation in format AMSBIB
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\by D.~K.~Belashchenko, A.~M.~Orlov, S.~P.~Orlova
\paper Crystallization of semiconductors in a~constant electric field
\jour TVT
\yr 1976
\vol 14
\issue 3
\pages 580--585
\mathnet{http://mi.mathnet.ru/tvt9427}
\transl
\jour High Temperature
\yr 1976
\vol 14
\issue 3
\pages 516--520
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\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0016955957}
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