Electrical Resistivity of a Solid Solution of $\alpha$–Titanium–Oxygen

Review, analysis, and generalization of experimental data on the electrical resistivity of solid solutions of $\alpha$–titanium–oxygen with an atomic content less than $c_{\mathrm{O}} \sim 10\%$ is performed. Numerical values of $d\rho(c_{\mathrm{O}})$/$dc_{\mathrm{O}}$ derivatives at temperatures of $77$ and $300$ K are obtained. The dependence $d\rho/dT$ as a function of $\rho_{293}$ and of the total oxygen content is built at room temperatures; and the $d\rho/dT = f(\rho_{293})$ analytical function is proposed for titanium. For titanium, the Matthiessen rule is shown not to be fulfilled even for a small amount of impurities. The experimental data on electrical resistivity of solutions of $\alpha$–titanium–oxygen, titanium, and monocrystalline titanium are approximated by an equation obtained within the framework of the two-band model approximation.