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Teplofizika vysokikh temperatur, 1991, Volume 29, Issue 5, Pages 899–902 (Mi tvt4457)  
Thermophysical Properties of Materials

Electrophysical properties of thin films made by reactive evaporation of aluminum nitride

L. A. Zhylyakov, A. V. Kostanovskii

Institute for High Temperatures, USSR Academy of Sciences
Full-text PDF (688 kB)
Abstract: Electrophysical properties are investigated for thin films of aluminum nitride, which are obtained by evaporating its condensed phase in a nitrogen atmosphere. A low-temperature variant of the method of forming continuous thin films of aluminum nitride with specified electrophysical properties is implemented.
Received: 14.03.1991
Bibliographic databases:
Document Type: Article
UDC: 546.621.171 : 539.216.2
Language: Russian
Citation: L. A. Zhylyakov, A. V. Kostanovskii, “Electrophysical properties of thin films made by reactive evaporation of aluminum nitride”, TVT, 29:5 (1991), 899–902; High Temperature, 29:5 (1991), 708–711
Citation in format AMSBIB
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\by L.~A.~Zhylyakov, A.~V.~Kostanovskii
\paper Electrophysical properties of thin films made by reactive evaporation of aluminum nitride
\jour TVT
\yr 1991
\vol 29
\issue 5
\pages 899--902
\mathnet{http://mi.mathnet.ru/tvt4457}
\transl
\jour High Temperature
\yr 1991
\vol 29
\issue 5
\pages 708--711
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\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0026227036}
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