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Teplofizika vysokikh temperatur, 2001, Volume 39, Issue 3, Pages 443–449
(Mi tvt1919)
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This article is cited in 51 scientific papers (total in 51 papers)
Thermophysical Properties of Materials
The thermophysical properties (heat capacity and thermal expansion) of single-crystal silicon
V. M. Glazov, A. S. Pashinkin Moscow Electronic Engineering Institute
Abstract:
Fragmentary investigations of the heat capacity and of the thermal expansion coefficient of single crystals of high-purity silicon are reported. The results of these investigations are compared with the entire body of data on these properties available to date. Generalized equations expressing the heat capacity and thermal expansion coefficient of silicon as functions of temperature are obtained for the temperature ranges of $298$–$1690$ and $100$–$1400$ K, respectively. The Debye temperature of crystalline silicon and the root-mean-square dynamic displacement of atoms from the equilibrium position in its crystal lattice are calculated using the available data on thermal expansion.
Received: 04.07.2000
Citation:
V. M. Glazov, A. S. Pashinkin, “The thermophysical properties (heat capacity and thermal expansion) of single-crystal silicon”, TVT, 39:3 (2001), 443–449; High Temperature, 39:3 (2001), 413–419
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https://www.mathnet.ru/eng/tvt1919 https://www.mathnet.ru/eng/tvt/v39/i3/p443
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