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Teplofizika vysokikh temperatur, 2003, Volume 41, Issue 4, Pages 540–544 (Mi tvt1691)  

This article is cited in 16 scientific papers (total in 16 papers)

Thermophysical Properties of Materials

The surface tension of melts of aluminum–indium binary system

B. B. Alchagirov, A. M. Chochaeva, V. B. Bekulov, Kh. B. Khokonov

Kabardino-Balkar State University, Nal'chik
Abstract: The temperature and concentration dependences of the surface tension (ST) of alloys of the $\mathrm{Al}$$\mathrm{In}$ system are investigated by the sessile drop method. It is shown that small (up to $0.6$ at. $\%$) additions of indium significantly lower the ST of aluminum, and the temperature coefficients of ST of the investigated alloys have positive values in this range of compositions. The obtained data are used to calculate the adsorption of indium (according to Guggenheim–Adam, $N$ option) and the number of its monolayers (according to Rusanov) in the surface layer of $\mathrm{Al}$$\mathrm{In}$ solutions. It follows from these data that the adsorption of indium on the melt surface reaches the maximal value with a bulk content of indium of about $0.1$ at. $\%$, and the excess of indium in the surface layer corresponds to three monolayers of indium.
Received: 20.08.2002
English version:
High Temperature, 2003, Volume 41, Issue 4, Pages 472–476
DOI: https://doi.org/10.1023/A:1025107731555
Document Type: Article
UDC: 532.614:546.62'682
Language: Russian
Citation: B. B. Alchagirov, A. M. Chochaeva, V. B. Bekulov, Kh. B. Khokonov, “The surface tension of melts of aluminum–indium binary system”, TVT, 41:4 (2003), 540–544; High Temperature, 41:4 (2003), 472–476
Citation in format AMSBIB
\Bibitem{AlcChoBek03}
\by B.~B.~Alchagirov, A.~M.~Chochaeva, V.~B.~Bekulov, Kh.~B.~Khokonov
\paper The surface tension of melts of aluminum--indium binary system
\jour TVT
\yr 2003
\vol 41
\issue 4
\pages 540--544
\mathnet{http://mi.mathnet.ru/tvt1691}
\transl
\jour High Temperature
\yr 2003
\vol 41
\issue 4
\pages 472--476
\crossref{https://doi.org/10.1023/A:1025107731555}
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  • This publication is cited in the following 16 articles:
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