Nonstoichiometry of doped zirconia

This paper is a continuation of [1] and is devoted to determining the type of defects arising in different ($\alpha$, $\beta$ and $\gamma$) modifications of crystal lattice of doped zirconia (solid solution of doping oxide $\mathrm{MO}_i$ in zirconia-$\mathrm{Zr}(\mathrm{M})\mathrm{O}_{2-x}$), as well as to finding the dependence of the number of defects on temperature $T$ and on partial pressure of oxygen $p(\mathrm{O}_2)$ in the ambient medium. Expressions are obtained for the sought dependences. It is assumed that a partial disintegration of the crystal lattice occurs in the high-temperature region, with the released neutral atoms (at low values of $p(\mathrm{O}_2)$) or cations (at high values of $p(\mathrm{O}_2)$) going to the interstice; doping elements are involved in such a transition along with zirconium.