The importance of taking into account the heterogeneous recombination of atoms when studying the kinetics of copper etching in chlorine plasma

The kinetics of the recombination of chlorine atoms on the wall of a plasma-chemical reactor and foil copper samples in the zone of the positive column of a glow discharge in chlorine are studied. The absolute values of the rate constants of the processes of heterogeneous recombination of chlorine atoms on the surfaces limiting the plasma zone and chemical interaction of chlorine atoms with copper, as well as the probabilities of these processes in the temperature range $300$–$600$ K, are obtained. It is shown that, without taking into account the process of heterogeneous recombination of atoms on copper samples, the probability of the chemical interaction of chlorine atoms with copper, experimentally obtained using the relaxation pulse technique, turns out to be overestimated on average by $15\%$.