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Teplofizika vysokikh temperatur, 2008, Volume 46, Issue 5, Pages 786–788 (Mi tvt1146)  
This article is cited in 3 scientific papers (total in 3 papers)

Short Communications

Condition of formation of 2D Coulomb crystal on the surface of dielectric

L. A. Zhylyakova, A. V. Kostanovskiia, G. P. Pokhilb

a Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
b Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Full-text PDF (360 kB) Citations (3)
Abstract: This study deals with the distribution of point charges on the surface of a uniformly charged dielectric plate; the expression for the criterion of formation of 2D Coulomb crystal is obtained. This criterion is independent of the charge surface density and is defined only by the temperature of dielectric surface. At room temperature, the aggregate of point charges on dielectric surface may be considered as 2D Coulomb crystal.
Received: 30.10.2007
English version:
High Temperature, 2008, Volume 46, Issue 5, Pages 721–724
DOI: https://doi.org/10.1134/S0018151X08050192
Bibliographic databases:
Document Type: Article
UDC: 537.213
PACS: 73.20.-r
Language: Russian
Citation: L. A. Zhylyakov, A. V. Kostanovskii, G. P. Pokhil, “Condition of formation of 2D Coulomb crystal on the surface of dielectric”, TVT, 46:5 (2008), 786–788; High Temperature, 46:5 (2008), 721–724
Citation in format AMSBIB
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\paper Condition of formation of 2D Coulomb crystal on the surface of dielectric
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Teplofizika vysokikh temperatur Teplofizika vysokikh temperatur
     
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