Teplofizika vysokikh temperatur
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


TVT:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Teplofizika vysokikh temperatur, 2019, Volume 57, Issue 2, Pages 301–303
DOI: https://doi.org/10.1134/S0040364419020091 (Mi tvt10995) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Short Communications

Emittance properties of siliconized silicon carbide in the temperature range of $1400$–$2200$ K

A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
Full-text PDF (216 kB) Citations (2)
References:
PDF
HTML
DOI: https://doi.org/10.1134/S0040364419020091
Abstract: The results of an experimental study of the total hemispherical and spectral normal emittances powers of siliconized silicon carbide in the temperature range of $1400$–$2200$ K are presented for the first time.
Funding agency Grant number
Russian Foundation for Basic Research 15-08-06279
This study was supported by the Russian Foundation for Basic Research, project no. 15-08-06279.
Received: 11.01.2018
Accepted: 10.10.2018
English version:
High Temperature, 2019, Volume 57, Issue 2, Pages 272–274
DOI: https://doi.org/10.1134/S0018151X19020093
Bibliographic databases:
Document Type: Article
UDC: 535.233.213
Language: Russian
Citation: A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin, “Emittance properties of siliconized silicon carbide in the temperature range of $1400$–$2200$ K”, TVT, 57:2 (2019), 301–303; High Temperature, 57:2 (2019), 272–274
Citation in format AMSBIB
\Bibitem{KosZeoKos19}
\by A.~V.~Kostanovskii, M.~G.~Zeodinov, M.~E.~Kostanovskaya, A.~A.~Pronkin
\paper Emittance properties of siliconized silicon carbide in the temperature range of $1400$--$2200$~K
\jour TVT
\yr 2019
\vol 57
\issue 2
\pages 301--303
\mathnet{http://mi.mathnet.ru/tvt10995}
\crossref{https://doi.org/10.1134/S0040364419020091}
\elib{https://elibrary.ru/item.asp?id=37297500}
\transl
\jour High Temperature
\yr 2019
\vol 57
\issue 2
\pages 272--274
\crossref{https://doi.org/10.1134/S0018151X19020093}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000480572900019}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85070714692}
Linking options:
  • https://www.mathnet.ru/eng/tvt10995
  • https://www.mathnet.ru/eng/tvt/v57/i2/p301
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Teplofizika vysokikh temperatur Teplofizika vysokikh temperatur
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024