Teplofizika vysokikh temperatur
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Teplofizika vysokikh temperatur, 2019, Volume 57, Issue 1, Pages 137–139
DOI: https://doi.org/10.1134/S0040364419010150 (Mi tvt10994) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Short Communications

Thermal conductivity of silicicated silicon carbide at $1400$–$2200$ K

A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
Full-text PDF (158 kB) Citations (4)
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DOI: https://doi.org/10.1134/S0040364419010150
Abstract: The authors present the results of an experimental study of the thermal conductivity of silicicated silicon carbide within the temperature range of $1400$–$2200$ K.
Funding agency Grant number
Russian Foundation for Basic Research 15-08-06279
The work is supported by the Russian Foundation for Basic Research, project no. 15-08-06279.
Received: 29.12.2017
Accepted: 13.03.2018
English version:
High Temperature, 2019, Volume 57, Issue 1, Pages 122–123
DOI: https://doi.org/10.1134/S0018151X19010152
Bibliographic databases:
Document Type: Article
UDC: 536.21.+661.665.1+546.28
Language: Russian
Citation: A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin, “Thermal conductivity of silicicated silicon carbide at $1400$–$2200$ K”, TVT, 57:1 (2019), 137–139; High Temperature, 57:1 (2019), 122–123
Citation in format AMSBIB
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\paper Thermal conductivity of silicicated silicon carbide at $1400$--$2200$~K
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Teplofizika vysokikh temperatur Teplofizika vysokikh temperatur
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