Teplofizika vysokikh temperatur
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Teplofizika vysokikh temperatur, 2018, Volume 56, Issue 5, Pages 841–843
DOI: https://doi.org/10.31857/S004036440003381-3 (Mi tvt10984) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Short Communications

Electrical resistivity of silicated silicon carbide

A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
Full-text PDF (327 kB) Citations (5)
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DOI: https://doi.org/10.31857/S004036440003381-3
Abstract: We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of $1200$–$2200$ K.
Funding agency Grant number
Russian Foundation for Basic Research 15-08-06279
The work was supported by the Russian Foundation for Basic Research, project no. 15-08-06279.
Received: 28.12.2017
English version:
High Temperature, 2018, Volume 56, Issue 5, Pages 824–826
DOI: https://doi.org/10.1134/S0018151X18050152
Bibliographic databases:
Document Type: Article
UDC: 537.311.31,661.665,546.28
Language: Russian
Citation: A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin, “Electrical resistivity of silicated silicon carbide”, TVT, 56:5 (2018), 841–843; High Temperature, 56:5 (2018), 824–826
Citation in format AMSBIB
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\paper Electrical resistivity of silicated silicon carbide
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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