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This article is cited in 5 scientific papers (total in 5 papers)
Short Communications
Electrical resistivity of silicated silicon carbide
A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
Abstract:
We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of $1200$–$2200$ K.
Received: 28.12.2017
Citation:
A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin, “Electrical resistivity of silicated silicon carbide”, TVT, 56:5 (2018), 841–843; High Temperature, 56:5 (2018), 824–826
Linking options:
https://www.mathnet.ru/eng/tvt10984 https://www.mathnet.ru/eng/tvt/v56/i5/p841
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Abstract page: | 244 | Full-text PDF : | 530 | References: | 30 |
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