Generation of a metal porous film by arc discharge

The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density. The average size of the clusters at optimal conditions (at a distance of $2$ mm from the discharge) is about $0.5\,\mu$m, and the deposition density is $3$–$5$ clusters per squared $\mu$m.