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Teoreticheskaya i Matematicheskaya Fizika, 1973, Volume 17, Number 1, Pages 103–117 (Mi tmf3929)  
This article is cited in 2 scientific papers (total in 2 papers)

Influence of the phonon subsystem on the probability of formation of proper point defects in nonmetallic crystals

A. E. Glauberman, V. A. Fedorin
Full-text PDF (1556 kB) Citations (2)
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Abstract: A selfconsisten t equation is obtained for the mean concentration of vacancies in a crystal , allowance being made for phonons. The change in the phonon spectrum of the lattice when defects are present is taken into account. It is shown that the appearance of a resonance level in the vibrational spectrum can lead to an appreciable lowering of the vacancy activation energy at sufficiently low temperatures.
Received: 21.08.1972
English version:
Theoretical and Mathematical Physics, 1973, Volume 17, Issue 1, Pages 1018–1029
DOI: https://doi.org/10.1007/BF01035585
Bibliographic databases:
Language: Russian
Citation: A. E. Glauberman, V. A. Fedorin, “Influence of the phonon subsystem on the probability of formation of proper point defects in nonmetallic crystals”, TMF, 17:1 (1973), 103–117; Theoret. and Math. Phys., 17:1 (1973), 1018–1029
Citation in format AMSBIB
\Bibitem{GlaFed73}
\by A.~E.~Glauberman, V.~A.~Fedorin
\paper Influence of the phonon subsystem on the probability of formation of proper point defects in nonmetallic crystals
\jour TMF
\yr 1973
\vol 17
\issue 1
\pages 103--117
\mathnet{http://mi.mathnet.ru/tmf3929}
\mathscinet{http://mathscinet.ams.org/mathscinet-getitem?mr=468982}
\transl
\jour Theoret. and Math. Phys.
\yr 1973
\vol 17
\issue 1
\pages 1018--1029
\crossref{https://doi.org/10.1007/BF01035585}
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  • https://www.mathnet.ru/eng/tmf/v17/i1/p103
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Теоретическая и математическая физика Theoretical and Mathematical Physics
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    Abstract page:294
    Full-text PDF :111
    References:33
    First page:1
     
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