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Teoreticheskaya i Matematicheskaya Fizika, 2002, Volume 131, Number 1, Pages 72–83
DOI: https://doi.org/10.4213/tmf1951 (Mi tmf1951) 		 
Quasi-Relativism, the Narrow-Gap Property, and Forced Electron Dynamics in Solids

B. S. Pavlovab, A. A. Pokrovskia, A. V. Strepetovc

a V. A. Fock Institute of Physics, Saint-Petersburg State University
b University of Auckland
c Saint-Petersburg State University of Aerospace Instrumentation
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DOI: https://doi.org/10.4213/tmf1951
Abstract: Narrow-gap semiconductors, used in quantum network engineering, are characterized by small effective electron masses on the Fermi level and hence by high electron mobility in the lattice. We construct an explicitly solvable model that clarifies one possible mechanism for small effective masses to appear. Another mathematical model constructed here describes a possible mechanism for using a traveling wave to control an alternating quantum current in a one-dimensional lattice.
English version:
Theoretical and Mathematical Physics, 2002, Volume 131, Issue 1, Pages 506–515
DOI: https://doi.org/10.1023/A:1015153719438
Bibliographic databases:
Language: Russian
Citation: B. S. Pavlov, A. A. Pokrovski, A. V. Strepetov, “Quasi-Relativism, the Narrow-Gap Property, and Forced Electron Dynamics in Solids”, TMF, 131:1 (2002), 72–83; Theoret. and Math. Phys., 131:1 (2002), 506–515
Citation in format AMSBIB
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\paper Quasi-Relativism, the Narrow-Gap Property, and Forced Electron Dynamics in Solids
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\transl
\jour Theoret. and Math. Phys.
\yr 2002
\vol 131
\issue 1
\pages 506--515
\crossref{https://doi.org/10.1023/A:1015153719438}
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