On the influence of light intensity on the limits of applicability of modulated optical signals recovery method

The kinetics of silicon photoconductivity with recombination centers of gold is investigated. If the frequency of light intensity modulation is less than the inverse value of the main charge carriers' lifetime, the functions describing the dependence of light intensity on time and the dependence of the photocurrent on time agree within some factor. At high frequencies of modulation of light intensity distortions arise. The dependences of light intensity on time and photocurrent on time become different. In this case, the effect of the recombination rate on the function of the variable component of the photocurrent is not significant. Basically, this function is determined by the dependence of the generation rate on time. At high frequencies, it is possible to "restore" the shape of the optical pulse using the electric pulse of the photoresistor. The dependences on the frequency of phase, linear and nonlinear distortions arising in the "restoration" of the dependence of the light intensity on time are obtained. The results are given for different values of the rate of charge carrier generation.