The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation

Processes are examined which involve the growth of film layers with dielectric properties on the surfaces of semiconductors during thermo-oxidation in the presence of impurity compounds specially introduced into the system. It is shown in relation to the thermo-oxidation of silicon and gallium arsenide that impurities influence significantly the kinetics and mechanism of the formation of dielectric oxide layers, accelerating the process, lowering the duration of the high-temperature treatment, and altering within wide limits the composition and properties of the resulting films. The rules governing processes involving the impurity thermo-oxidation of semiconductors, determined by the class of impurity compounds introduced, were discovered. The principal criteria governing the selection of the impurities influencing specifically the oxidation process are discussed, the methods for their introduction into the system are examined, and the experimental results concerning the kinetics and mechanisms of such processes are analysed. The bibliography includes 90 references.