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Russian Chemical Reviews, 1989, Volume 58, Issue 6, Pages 517–533
DOI: https://doi.org/10.1070/RC1989v058n06ABEH003450
(Mi rcr3975)
 

This article is cited in 3 scientific papers (total in 3 papers)

The influence of electric fields on the chemisorption and catalytic properties of semiconductor catalysts

E. V. Mikheeva

Institute of Catalysis Siberian Branch of the Russian Academy of Sciences, Novosibirsk
English full-text Citations (3)
Abstract: Studies of the influence of electric fields on the chemisorption and catalytic properties of semiconductor catalysts, carried out in order to test the principal postulates of the electronic theory of catalysis, are examined. It is shown that, because of the high density of the surface states, the possibility of the electronic control of the surfaces of polycrystalline catalysts by the field effect method is extremely limited. Possible ways of regulating the chemisorption and catalytic activities of solid catalysts with the aid of an external electric field are discussed: (1) the change in the concentration of polar molecules in strong inhomogeneous local fields near the surface; (2) the activation of surface compounds by "hot" electrons; (3) the modification of the defective structure when the concentration of cations in the surface layers of oxide catalysts is altered; (4) surface doping of film catalysts by alkali metals from the dielectric support during their electrolytic deposition. 130 references.
Russian version:
Uspekhi Khimii, 1989, Volume 58, Issue 6, Pages 881–907
DOI: https://doi.org/10.1070/RC1989v058n06ABEH003450
Bibliographic databases:
Document Type: Article
UDC: 541.128.3
Language: English
Original paper language: Russian


Citation: E. V. Mikheeva, “The influence of electric fields on the chemisorption and catalytic properties of semiconductor catalysts”, Usp. Khim., 58:6 (1989), 881–907; Russian Chem. Reviews, 58:6 (1989), 517–533
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  • https://doi.org/10.1070/RC1989v058n06ABEH003450
  • https://www.mathnet.ru/eng/rcr/v58/i6/p881
  • This publication is cited in the following 3 articles:
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