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Russian Chemical Reviews, 1986, Volume 55, Issue 7, Pages 597–605
DOI: https://doi.org/10.1070/RC1986v055n07ABEH003210
(Mi rcr3727)
 

This article is cited in 2 scientific papers (total in 2 papers)

The Preparation and Properties of Indium Phosphide

V. P. Talyzin, A. Ya. Nashel'skii

JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry
English full-text Citations (2)
Abstract: The present review examines recent work on the synthesis of polycrystalline specimens of indium phosphide and the growth of single crystals of this compound for the modern electronics industry. The synthesis of polycrystalline indium phosphide by different methods is examined. Particular attention has been paid to work on the preparation of highly pure material and the growth of single crystals with a low concentration of dislocations and single crystals oriented along <100>.
The bibliography contains 45 references.
Russian version:
Uspekhi Khimii, 1986, Volume 55, Issue 7, Pages 1083–1095
DOI: https://doi.org/10.1070/RC1986v055n07ABEH003210
Bibliographic databases:
Document Type: Article
UDC: 621.315.592
Language: English
Original paper language: Russian


Citation: V. P. Talyzin, A. Ya. Nashel'skii, “The Preparation and Properties of Indium Phosphide”, Usp. Khim., 55:7 (1986), 1083–1095; Russian Chem. Reviews, 55:7 (1986), 597–605
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  • https://doi.org/10.1070/RC1986v055n07ABEH003210
  • https://www.mathnet.ru/eng/rcr/v55/i7/p1083
  • This publication is cited in the following 2 articles:
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