The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes

The available information about the technology of the preparation of polyorganosilasesquioxanes, their structure, and properties is described systematically, surveyed, and compared with that on inorganic oxide dielectrics. The possibilities and advantages of their application as dielectric materials in semiconductor electronics are examined; analysis of the experimental literature data has led to the conclusion that the method of preparation has a decisive influence on the mechanism of the formation of oligomer molecules their conversion into polymers, and their interaction with various supports.
The bibliography includes 281 references.