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Russian Chemical Reviews, 1972, Volume 41, Issue 1, Pages 36–46
DOI: https://doi.org/10.1070/RC1972v041n01ABEH002027 (Mi rcr2503) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Oxidation of Silicon

V. A. Arslambekov, I. D. Kazarinova, K. M. Gorbunova

Institute of Physical Chemistry, the USSR Academy of Sciences, Moscow
English full-text Citations (4)
DOI: https://doi.org/10.1070/RC1972v041n01ABEH002027
Abstract: Work on the oxidation of silicon in various gaseous media has been reviewed. Particular attention has been paid to the mechanism of formation and the kinetics of the growth of oxide films on silicon during high-temperature oxidation. Published data on the composition and structure of the resulting film of reaction products, the dependence of the rate of oxidation on the pressure of the oxidising medium, and the possible participation of silicon ions in the growth of the oxide film have been discussed.
The bibliography contains 120 references.
Russian version:
Uspekhi Khimii, 1972, Volume 41, Issue 1, Pages 64–83
DOI: https://doi.org/10.1070/RC1972v041n01ABEH002027
Bibliographic databases:
Document Type: Article
UDC: 546.28
Language: English
Original paper language: Russian


Citation: V. A. Arslambekov, I. D. Kazarinova, K. M. Gorbunova, “Oxidation of Silicon”, Usp. Khim., 41:1 (1972), 64–83; Russian Chem. Reviews, 41:1 (1972), 36–46
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