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Russian Chemical Reviews, 1968, Volume 37, Issue 9, Pages 724–728
DOI: https://doi.org/10.1070/RC1968v037n09ABEH001697
(Mi rcr2207)
 

The "Memory" Effect in Semiconductor Adsorbents and Catalysts during Radiation

F. F. Vol'kenshteina, V. G. Barub

a Institute of Physical Chemistry, the USSR Academy of Sciences, Moscow
b Institute of Radio Engineering and Electronics, Academy of Sciences of the USSR
Abstract: CONTENTS
I. The "memory" effect under various forms of irradiation 724
II. "Memory" associated with a shift in the electronic equilibrium 725
III. "Memory" associated with a disturbance of the electronic equilibrium 726
Document Type: Article
UDC: 541.128:537.311.33
Language: English
Original paper language: Russian


Citation: F. F. Vol'kenshtein, V. G. Baru, “The "Memory" Effect in Semiconductor Adsorbents and Catalysts during Radiation”, Usp. Khim., 37:9 (1968), 1685–1693; Russian Chem. Reviews, 37:9 (1968), 724–728
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