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This article is cited in 1 scientific paper (total in 1 paper)
Method for increasing information capacity of optoelectronic memories
V. B. Fedorov, V. N. Mitsai
Abstract:
An analysis is made of a method for increasing the information capacity of bit-organized optoelectronic memories. This method involves the use of multiple splitting of light beams as well as image multiplication and transfer in an optical system, and it makes it possible to increase the capacity of random-access optoelectronic memories up to $10^{11}$ bit or more.
Received: 09.07.1979 Revised: 20.09.1979
Citation:
V. B. Fedorov, V. N. Mitsai, “Method for increasing information capacity of optoelectronic memories”, Kvantovaya Elektronika, 7:3 (1980), 506–518 [Sov J Quantum Electron, 10:3 (1980), 288–294]
Linking options:
https://www.mathnet.ru/eng/qe9974 https://www.mathnet.ru/eng/qe/v7/i3/p506
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Abstract page: | 100 | Full-text PDF : | 89 |
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