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Kvantovaya Elektronika, 1980, Volume 7, Number 3, Pages 506–518 (Mi qe9974)  
This article is cited in 1 scientific paper (total in 1 paper)

Method for increasing information capacity of optoelectronic memories

V. B. Fedorov, V. N. Mitsai
Full-text PDF (2145 kB) Citations (1)
Abstract: An analysis is made of a method for increasing the information capacity of bit-organized optoelectronic memories. This method involves the use of multiple splitting of light beams as well as image multiplication and transfer in an optical system, and it makes it possible to increase the capacity of random-access optoelectronic memories up to $10^{11}$ bit or more.
Received: 09.07.1979
Revised: 20.09.1979
English version:
Soviet Journal of Quantum Electronics, 1980, Volume 10, Issue 3, Pages 288–294
DOI: https://doi.org/10.1070/QE1980v010n03ABEH009974
Bibliographic databases:
UDC: 681.327.2:535
PACS: 42.30.Nt
Language: Russian
Citation: V. B. Fedorov, V. N. Mitsai, “Method for increasing information capacity of optoelectronic memories”, Kvantovaya Elektronika, 7:3 (1980), 506–518 [Sov J Quantum Electron, 10:3 (1980), 288–294]
Citation in format AMSBIB
\Bibitem{FedMit80}
\by V.~B.~Fedorov, V.~N.~Mitsai
\paper Method for increasing information capacity of optoelectronic memories
\jour Kvantovaya Elektronika
\yr 1980
\vol 7
\issue 3
\pages 506--518
\mathnet{http://mi.mathnet.ru/qe9974}
\transl
\jour Sov J Quantum Electron
\yr 1980
\vol 10
\issue 3
\pages 288--294
\crossref{https://doi.org/10.1070/QE1980v010n03ABEH009974}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=A1980JP22400008}
Linking options:
  • https://www.mathnet.ru/eng/qe9974
  • https://www.mathnet.ru/eng/qe/v7/i3/p506
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Квантовая электроника Quantum Electronics
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    Abstract page:100
    Full-text PDF :89
     
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