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Kvantovaya Elektronika, 1980, Volume 7, Number 1, Pages 179–181 (Mi qe9865)  

Brief Communications

Mechanism of enhancement of light scattering during optical recording in $As_2S_3$ films

A. A. Anikin, V. K. Malinovskii, A. A. Sokolov

Institute of automation and Electrometry, Novosibirsk
Abstract: An experimental study was made of the kinetics of light scattering during exposure of films $As_2S_3$ to monochromatic and white light. It was established that the experimentally observed considerable enhancement of light scattering was due to the coherence of light. Hie maximum enhancement depended on the initial degree of scattering and on the film thickness. The surface layer of a film acted as the source of the strong initial scattering in the case of films whose thickness exceeded 7 $\mu m$.
Received: 23.04.1979
English version:
Soviet Journal of Quantum Electronics, 1980, Volume 10, Issue 1, Pages 100–101
DOI: https://doi.org/10.1070/QE1980v010n01ABEH009865
Bibliographic databases:
Document Type: Article
UDC: 339.213
PACS: 78.65.Jd
Language: Russian
Citation: A. A. Anikin, V. K. Malinovskii, A. A. Sokolov, “Mechanism of enhancement of light scattering during optical recording in $As_2S_3$ films”, Kvantovaya Elektronika, 7:1 (1980), 179–181 [Sov J Quantum Electron, 10:1 (1980), 100–101]
Citation in format AMSBIB
\Bibitem{AniMalSok80}
\by A.~A.~Anikin, V.~K.~Malinovskii, A.~A.~Sokolov
\paper Mechanism of enhancement of light scattering during optical recording in $As_2S_3$ films
\jour Kvantovaya Elektronika
\yr 1980
\vol 7
\issue 1
\pages 179--181
\mathnet{http://mi.mathnet.ru/qe9865}
\transl
\jour Sov J Quantum Electron
\yr 1980
\vol 10
\issue 1
\pages 100--101
\crossref{https://doi.org/10.1070/QE1980v010n01ABEH009865}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=A1980JE08000022}
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  • https://www.mathnet.ru/eng/qe/v7/i1/p179
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    Квантовая электроника Quantum Electronics
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