Investigation of the stability of the power of radiation pulses emitted from one-sided GaAs heterostructure injection lasers

A comparison was made of the short-term stability of the output power with its distribution across the exit resonator face of one-sided pulse GaAs heterostructure injection lasers. A relationship was established between the number of stimulated emission channels and the stability of the output radiation, and possible reasons for this relationship were analyzed. Some features of changes in the emitted radiation were studied under slow degradation conditions.