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Kvantovaya Elektronika, 1989, Volume 16, Number 11, Pages 2343–2348 (Mi qe9597)  

This article is cited in 4 scientific papers (total in 4 papers)

Optoelectronics. Laser applications and other topics in quantum electronics

Half-tone optical storage in a-Si films

V. Z. Gochiyaev, V. P. Korolkov, A. P. Sokolov, V. P. Chernukhin
Abstract: Bleaching of amorphous silicon films by local heating with a focused laser beam was found to provide a promising optical storage method useful in the fabrication of half-tone optical masks needed in the fabrication of optical diffraction components. A study was made of changes in the optical properties and the structure of a-Si films occurring under the influence of laser radiation. A spatial resolution up to 2000 lines/mm was achieved. A mechanism explaining the experimental results was developed.
Received: 09.08.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 11, Pages 1506–1509
DOI: https://doi.org/10.1070/QE1989v019n11ABEH009597
Bibliographic databases:
Document Type: Article
UDC: 539.216:535.211
PACS: 42.79.Vb, 42.70.Ln, 42.70.Nq, 42.62.Cf, 78.66.Jg, 42.86.+b
Language: Russian


Citation: V. Z. Gochiyaev, V. P. Korolkov, A. P. Sokolov, V. P. Chernukhin, “Half-tone optical storage in a-Si films”, Kvantovaya Elektronika, 16:11 (1989), 2343–2348 [Sov J Quantum Electron, 19:11 (1989), 1506–1509]
Linking options:
  • https://www.mathnet.ru/eng/qe9597
  • https://www.mathnet.ru/eng/qe/v16/i11/p2343
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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