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Kvantovaya Elektronika, 1979, Volume 6, Number 9, Pages 2045–2046 (Mi qe9500)  
Brief Communications

Electron-beam-excited ultraviolet semiconductor laser

L. N. Kurbatov, G. S. Kozina, T. A. Kostinskaya, V. S. Rudnevskiĭ, I. M. Tkachenko, A. N. Georgobiani, V. B. Gutan
Full-text PDF (316 kB)
Abstract: An investigation was made of laser targets made of ZnS and ZnO single crystals. The pulsed power of the output radiation reached a few kilowatts.
Received: 27.03.1979
English version:
Soviet Journal of Quantum Electronics, 1979, Volume 9, Issue 9, Pages 1204–1205
DOI: https://doi.org/10.1070/QE1979v009n09ABEH009500
Document Type: Article
UDC: 621.373.826.038.825
PACS: 42.55.Px
Language: Russian


Citation: L. N. Kurbatov, G. S. Kozina, T. A. Kostinskaya, V. S. Rudnevskiĭ, I. M. Tkachenko, A. N. Georgobiani, V. B. Gutan, “Electron-beam-excited ultraviolet semiconductor laser”, Kvantovaya Elektronika, 6:9 (1979), 2045–2046 [Sov J Quantum Electron, 9:9 (1979), 1204–1205]
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