Optically controlled deflector based on a thin-film waveguide

An investigation was made of the deflection of a He–Ne laser beam traveling in a thin-film diffused waveguide made of the photosemiconductor CdS_xSe_1–x, and subjected to argon and nitrogen laser radiations. The deflection was due to a locally induced change in the refractive index of the waveguide because of the absorption in the photosemiconductor of short-wavelength controlling-laser radiation. The beam deflection time was ~10^–7 sec.