Photodeflection spectroscopy of ion-implanted silicon

The method of photodeflection spectroscopy is used in a study of silicon single crystals implanted with bismuth, iron, and indium ions of 25 keV energy. This method was found to be suitable for monitoring the recovery of the crystal structure of the implanted samples as a result of electron annealing. The dependence of the amplitude of the photodeflection signal on the implanted indium ion dose was determined in the range 5×10¹¹–5×10¹⁵ cm^–2. The sensitivity limit of the method in respect of the minimum detectable implanted dose was 2×10¹² cm^–2. A comparison was made of the results of investigations carried out by the methods of photodeflection spectroscopy and Rutherford backscattering of light ions.