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Kvantovaya Elektronika, 1987, Volume 14, Number 6, Pages 1179–1181 (Mi qe9323)  

This article is cited in 1 scientific paper (total in 1 paper)

Interaction of laser radiation with matter

Changes in the reflectivity and photoacoustic effect in semiconductors subjected to nanosecond laser pulses

I. V. Veselovskiĭ, B. M. Zhiryakov, A. A. Samokhin
Full-text PDF (537 kB) Citations (1)
Abstract: A qualitative difference was observed in the behavior of photoacoustic signals when germanium and silicon were melted by laser pulses of 20 nsec duration and 1.06 µ wavelength. After increase of the reflectivity a photoacoutic pressure pulse in germanium exhibited a strong dip, whereas in the case of silicon there was no such transformation of the photoacoustic signal.
Received: 30.12.1986
English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 6, Pages 750–751
DOI: https://doi.org/10.1070/QE1987v017n06ABEH009323
Bibliographic databases:
Document Type: Article
UDC: 535.211:536.4
PACS: 61.80.Ba, 61.82.Fk, 78.20.Hp, 78.20.Ci
Language: Russian


Citation: I. V. Veselovskiĭ, B. M. Zhiryakov, A. A. Samokhin, “Changes in the reflectivity and photoacoustic effect in semiconductors subjected to nanosecond laser pulses”, Kvantovaya Elektronika, 14:6 (1987), 1179–1181 [Sov J Quantum Electron, 17:6 (1987), 750–751]
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  • https://www.mathnet.ru/eng/qe9323
  • https://www.mathnet.ru/eng/qe/v14/i6/p1179
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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