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Kvantovaya Elektronika, 1989, Volume 16, Number 10, Pages 2074–2077 (Mi qe9240)  
Physical processes in lasers

Nonradiative losses in InGaAsP/InP heterostructures

P. G. Eliseev, I. S. Tsimberova
Full-text PDF (621 kB)
Abstract: A study was made of the dependence of the luminescence intensity and of the excess-carrier lifetime on the pump current in diode heterostructures emitting at wavelengths of 1.06, 1.27, and 1.55 μm. An estimate was obtained of the Auger recombination coefficient amounting to 0.9 X 10 – 29, 3.1 X 10 – 29, and 1.1 X 10 – 28 cm6/s at these three wavelengths, respectively.
Received: 06.12.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 10, Pages 1334–1336
DOI: https://doi.org/10.1070/QE1989v019n10ABEH009240
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 72.20.Jv, 79.20.-m
Language: Russian


Citation: P. G. Eliseev, I. S. Tsimberova, “Nonradiative losses in InGaAsP/InP heterostructures”, Kvantovaya Elektronika, 16:10 (1989), 2074–2077 [Sov J Quantum Electron, 19:10 (1989), 1334–1336]
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