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Kvantovaya Elektronika, 1989, Volume 16, Number 10, Pages 2034–2036 (Mi qe9229)  

Solid-state and semiconductor lasers

Longitudinal electron-beam-pumped CdHgTe laser

B. G. Borisov, B. M. Lavrushin, A. S. Nasibov, M. N. Sypchenko, B. L. Sherman
Abstract: A CdHgTe/CdTe heterostructure grown by liquid phase epitaxy was used to develop a laser. The CdHgTe epitaxial laser formed the active region whilst the CdTe substrate formed the passive part of the resonator. At an electron energy of 50 keV and a temperature of 77 K, lasing was obtained at 1.48 μm in Cd0.65Hg0.35Te. The maximum external differential efficiency was 3.4%.
Received: 17.04.1989
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 10, Pages 1309–1310
DOI: https://doi.org/10.1070/QE1989v019n10ABEH009229
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Da, 81.15.Lm, 42.60.Lh
Language: Russian


Citation: B. G. Borisov, B. M. Lavrushin, A. S. Nasibov, M. N. Sypchenko, B. L. Sherman, “Longitudinal electron-beam-pumped CdHgTe laser”, Kvantovaya Elektronika, 16:10 (1989), 2034–2036 [Sov J Quantum Electron, 19:10 (1989), 1309–1310]
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  • https://www.mathnet.ru/eng/qe/v16/i10/p2034
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