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Solid-state and semiconductor lasers
Longitudinal electron-beam-pumped CdHgTe laser
B. G. Borisov, B. M. Lavrushin, A. S. Nasibov, M. N. Sypchenko, B. L. Sherman
Abstract:
A CdHgTe/CdTe heterostructure grown by liquid phase epitaxy was used to develop a laser. The CdHgTe epitaxial laser formed the active region whilst the CdTe substrate formed the passive part of the resonator. At an electron energy of 50 keV and a temperature of 77 K, lasing was obtained at 1.48 μm in Cd0.65Hg0.35Te. The maximum external differential efficiency was 3.4%.
Received: 17.04.1989
Citation:
B. G. Borisov, B. M. Lavrushin, A. S. Nasibov, M. N. Sypchenko, B. L. Sherman, “Longitudinal electron-beam-pumped CdHgTe laser”, Kvantovaya Elektronika, 16:10 (1989), 2034–2036 [Sov J Quantum Electron, 19:10 (1989), 1309–1310]
Linking options:
https://www.mathnet.ru/eng/qe9229 https://www.mathnet.ru/eng/qe/v16/i10/p2034
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Statistics & downloads: |
Abstract page: | 144 | Full-text PDF : | 73 | First page: | 1 |
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