Semiconductor laser with an electron-beam-induced stripe waveguide

It is shown that the position of the lasing channel can be stabilized, transverse mode selection can be achieved, and directionality of semiconductor laser radiation can be controlled by altering the orientation of a stripe active region, produced by pumping with a ribbon electron beam, with respect to the normal to planar resonator mirrors and corrugations of a distributed-feedback structure. Measurements were made of the dependences of the position of the maximum in the angular distribution and of the threshold current on the orientation of the active region.