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Kvantovaya Elektronika, 1989, Volume 16, Number 10, Pages 2020–2022 (Mi qe9208)  

Solid-state and semiconductor lasers

Laser effect in PbSSe compounds pumped longitudinally with an electron beam

O. V. Bogdankevich, S. V. Dryagin, A. D. Konovalov, G. A. Meerovich, Yu. G. Selivanov, V. A. Stepushkin, V. N. Ulasyuk, M. P. Chebotarev, A. P. Shotov
Abstract: An investigation was made of the characteristics of lasing of semiconductor (lead chalcogenide) active elements pumped longitudinally by an electron beam. The dependences of the threshold current and of the lasing efficiency on the temperature of an active element and on the electron energy were determined.
Received: 16.02.1989
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 10, Pages 1300–1301
DOI: https://doi.org/10.1070/QE1989v019n10ABEH009208
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Language: Russian


Citation: O. V. Bogdankevich, S. V. Dryagin, A. D. Konovalov, G. A. Meerovich, Yu. G. Selivanov, V. A. Stepushkin, V. N. Ulasyuk, M. P. Chebotarev, A. P. Shotov, “Laser effect in PbSSe compounds pumped longitudinally with an electron beam”, Kvantovaya Elektronika, 16:10 (1989), 2020–2022 [Sov J Quantum Electron, 19:10 (1989), 1300–1301]
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