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Mechanisms of laser action in epitaxial InAs subjected to electron beam excitation
I. V. Kryukova, V. I. Leskovich, E. V. Matveenko
Abstract:
Investigations were made of the spectral and power characteristics of electron-beam-excited epitaxial InAs lasers as a function of the carrier density, excitation rate, and temperature (80–220°K). The main laser action channels were interband and shallow acceptor levels, transitions to impurity states giving the highest efficiency (up to 2%). It was found that the main mechanism which reduces the efficiency of these lasers is nonradiative interband and impurity Auger recombination of nonequilibrium carriers whose probability in this compound increases as a result of the participation of a spin-orbit-split valence subband in the Auger processes.
Received: 07.09.1978
Citation:
I. V. Kryukova, V. I. Leskovich, E. V. Matveenko, “Mechanisms of laser action in epitaxial InAs subjected to electron beam excitation”, Kvantovaya Elektronika, 6:7 (1979), 1401–1408 [Sov J Quantum Electron, 9:7 (1979), 823–827]
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https://www.mathnet.ru/eng/qe9188 https://www.mathnet.ru/eng/qe/v6/i7/p1401
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Abstract page: | 106 | Full-text PDF : | 54 |
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