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Kvantovaya Elektronika, 1989, Volume 16, Number 9, Pages 1915–1919 (Mi qe9128)  

Applications of lasers and other topics in quantum electronics

Influence of reflection conditions on the optoelectronic signal in AlGaAs injection lasers

V. N. Morozov, S. E. Solodov
Abstract: An analysis is made of the influence of the reflection conditions on an optoelectronic signal obtained from injection heterolasers with different structures. The dependence of the optoelectronic signal on the pump current and on the spontaneous radiation level is considered. It is shown that the surface quality can be deduced from the optoelectronic signal. The results indicate that the strongest optoelectronic signal is obtained for lasers with lateral optical confinement and an antireflection-coated surface facing a reflector.
Received: 19.02.1988
Revised: 13.01.1989
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 9, Pages 1233–1236
DOI: https://doi.org/10.1070/QE1989v019n09ABEH009128
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Jf, 42.79.Wc, 42.60.Da
Language: Russian


Citation: V. N. Morozov, S. E. Solodov, “Influence of reflection conditions on the optoelectronic signal in AlGaAs injection lasers”, Kvantovaya Elektronika, 16:9 (1989), 1915–1919 [Sov J Quantum Electron, 19:9 (1989), 1233–1236]
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    Квантовая электроника Quantum Electronics
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