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Applications of lasers and other topics in quantum electronics
Influence of reflection conditions on the optoelectronic signal in AlGaAs injection lasers
V. N. Morozov, S. E. Solodov
Abstract:
An analysis is made of the influence of the reflection conditions on an optoelectronic signal obtained from injection heterolasers with different structures. The dependence of the optoelectronic signal on the pump current and on the spontaneous radiation level is considered. It is shown that the surface quality can be deduced from the optoelectronic signal. The results indicate that the strongest optoelectronic signal is obtained for lasers with lateral optical confinement and an antireflection-coated surface facing a reflector.
Received: 19.02.1988 Revised: 13.01.1989
Citation:
V. N. Morozov, S. E. Solodov, “Influence of reflection conditions on the optoelectronic signal in AlGaAs injection lasers”, Kvantovaya Elektronika, 16:9 (1989), 1915–1919 [Sov J Quantum Electron, 19:9 (1989), 1233–1236]
Linking options:
https://www.mathnet.ru/eng/qe9128 https://www.mathnet.ru/eng/qe/v16/i9/p1915
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Statistics & downloads: |
Abstract page: | 116 | Full-text PDF : | 61 | First page: | 1 |
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