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This article is cited in 1 scientific paper (total in 1 paper)
Applications of lasers and other topics
Inhomogeneous broadening of an emission line of a semiconductor laser
O. V. Bogdankevich, V. O. Davydov, M. M. Zverev, Yu. A. Kudeyarov, V. N. Faĭfer
Abstract:
A phenomenological model is proposed for the recombination process in semiconductor lasers utilizing an electron transition from the conduction band to a shallow impurity level near the valence band. It is shown that the distribution function of electrons at this level may not be of quasiequilibrium nature, so that the emission line is inhomogeneously broadened.
Received: 31.10.1986
Citation:
O. V. Bogdankevich, V. O. Davydov, M. M. Zverev, Yu. A. Kudeyarov, V. N. Faĭfer, “Inhomogeneous broadening of an emission line of a semiconductor laser”, Kvantovaya Elektronika, 14:5 (1987), 1096–1098 [Sov J Quantum Electron, 17:5 (1987), 695–696]
Linking options:
https://www.mathnet.ru/eng/qe9090 https://www.mathnet.ru/eng/qe/v14/i5/p1096
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