Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1979, Volume 6, Number 5, Pages 1109–1111 (Mi qe9088)  

Brief Communications

Degradation of uncooled electron-pumped gallium arsenide lasers

E. M. Krasavina, I. V. Kryukova
Abstract: An investigation was made of the degradation of electron-pumped gallium arsenide lasers operating at room temperature. One of the reasons for the degradation of these uncooled lasers was (in contrast to the cooled devices) an increase in the density of dislocations in the active region of a crystal because of the greater plasticity at higher temperatures.
Received: 01.08.1978
English version:
Soviet Journal of Quantum Electronics, 1979, Volume 9, Issue 5, Pages 656–657
DOI: https://doi.org/10.1070/QE1979v009n05ABEH009088
Document Type: Article
UDC: 621.378.325
PACS: 42.55.Px, 61.70.Jc
Language: Russian


Citation: E. M. Krasavina, I. V. Kryukova, “Degradation of uncooled electron-pumped gallium arsenide lasers”, Kvantovaya Elektronika, 6:5 (1979), 1109–1111 [Sov J Quantum Electron, 9:5 (1979), 656–657]
Linking options:
  • https://www.mathnet.ru/eng/qe9088
  • https://www.mathnet.ru/eng/qe/v6/i5/p1109
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024