Theory of defect-forming resonance electron capture in laser crystals

An analysis is made of some aspects of defect formation in laser semiconductor crystals under conditions of capture of nonequilibrium carriers by the resonance level of a deep center. Calculations are made of the resonance level width Γ_n, with respect to electron autoionization for the cases of acceptor and donor centers. A numerical investigation is made by computer of the dependence of Γ_n on the captured electron energy and on various center parameters. A comparison is made with the experiment for the case of a donor center. Analyses are also made of some aspects of the defect formation kinetics. Functions describing the increase in the stimulated emission threshold and the laser service life are determined and a comparison is made with some experimental results.