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Kvantovaya Elektronika, 2005, Volume 35, Number 8, Pages 705–710 (Mi qe8995)  

Lasers

Theory of a vertical-cavity surface-emitting semiconductor laser with an external mirror

D. V. Vysotskii, A. P. Napartovich

Troitsk Institute for Innovation and Fusion Research
Abstract: High-power lasing in a single spatial mode of a vertical-cavity surface-emitting semiconductor laser (VCSEL) can be achieved by controlling the mode composition by means of an external cavity. Among the important factors which affect the mode composition is the interference of the fields inside the VCSEL and the field which returns after reflection from the external mirror. An approximate theoretical analysis of the optical modes is performed for a VCSEL with an external mirror. The mode frequencies and the degree of longitudinal mode discrimination are determined in a plane wave approximation. A condition for the existence of a single longitudinal mode is obtained. A two-dimensional equation for the effective refractive index is derived in the explicit form, which describes the transverse field distributions. Explicit expressions are obtained for the fields of transverse modes in a VCSEL with a plane external mirror and a parabolic profile of the gain.
Received: 05.05.2005
English version:
Quantum Electronics, 2005, Volume 35, Issue 8, Pages 705–710
DOI: https://doi.org/10.1070/QE2005v035n08ABEH008995
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Da
Language: Russian


Citation: D. V. Vysotskii, A. P. Napartovich, “Theory of a vertical-cavity surface-emitting semiconductor laser with an external mirror”, Kvantovaya Elektronika, 35:8 (2005), 705–710 [Quantum Electron., 35:8 (2005), 705–710]
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    Квантовая электроника Quantum Electronics
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