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Kvantovaya Elektronika, 1981, Volume 8, Number 12, Pages 2693–2695 (Mi qe8944)  

This article is cited in 3 scientific papers (total in 3 papers)

Brief Communications

Q switching of a resonator by the metal–semiconductor phase transition

A. A. Bugaev, B. P. Zakharchenya, F. A. Chudnovskiĭ
Full-text PDF (571 kB) Citations (3)
Abstract: An experimental study was made of Q switching in a resonator by a mirror with a nonlinear reflection coefficient. This mirror was an interference reflecting structure containing a vanadium oxide film capable of undergoing a metal–semiconductor transition. The nonlinearity of the reflection coefficient was due to initiation of this phase transition by laser radiation. A determination was made of the parameters of a giant radiation pulse obtained using such a passive switch with a vanadium oxide film.
Received: 02.04.1981
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 12, Pages 1638–1639
DOI: https://doi.org/10.1070/QE1981v011n12ABEH008944
Bibliographic databases:
Document Type: Article
UDC: 621.378
PACS: 42.55.Rz, 42.60.Da
Language: Russian


Citation: A. A. Bugaev, B. P. Zakharchenya, F. A. Chudnovskiĭ, “Q switching of a resonator by the metal–semiconductor phase transition”, Kvantovaya Elektronika, 8:12 (1981), 2693–2695 [Sov J Quantum Electron, 11:12 (1981), 1638–1639]
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  • https://www.mathnet.ru/eng/qe8944
  • https://www.mathnet.ru/eng/qe/v8/i12/p2693
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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