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This article is cited in 3 scientific papers (total in 3 papers)
Brief Communications
Q switching of a resonator by the metal–semiconductor phase transition
A. A. Bugaev, B. P. Zakharchenya, F. A. Chudnovskiĭ
Abstract:
An experimental study was made of Q switching in a resonator by a mirror with a nonlinear reflection coefficient. This mirror was an interference reflecting structure containing a vanadium oxide film capable of undergoing a metal–semiconductor transition. The nonlinearity of the reflection coefficient was due to initiation of this phase transition by laser radiation. A determination was made of the parameters of a giant radiation pulse obtained using such a passive switch with a vanadium oxide film.
Received: 02.04.1981
Citation:
A. A. Bugaev, B. P. Zakharchenya, F. A. Chudnovskiĭ, “Q switching of a resonator by the metal–semiconductor phase transition”, Kvantovaya Elektronika, 8:12 (1981), 2693–2695 [Sov J Quantum Electron, 11:12 (1981), 1638–1639]
Linking options:
https://www.mathnet.ru/eng/qe8944 https://www.mathnet.ru/eng/qe/v8/i12/p2693
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Abstract page: | 187 | Full-text PDF : | 85 |
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