V. I. Kozlovskiĭ, A. S. Nasibov, A. N. Pechenov, Yu. M. Popov, “Mechanism of stimulated emission from laser screens made of II-VI semiconductor compounds”, Kvantovaya Elektronika, 6:1 (1979), 189–196 [Sov J Quantum Electron, 9:1 (1979), 104

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Kvantovaya Elektronika, 1979, Volume 6, Number 1, Pages 189–196 (Mi qe8704)

This article is cited in 4 scientific papers (total in 4 papers)

Mechanism of stimulated emission from laser screens made of II-VI semiconductor compounds

V. I. Kozlovskiĭ, A. S. Nasibov, A. N. Pechenov, Yu. M. Popov

Full-text PDF (1642 kB) Citations (4)

Abstract: The characteristics of laser screens made of II-VI semiconductor compounds (and designed to operate in electron-beam tubes) were investigated in the range 80–300°K. The spectral characteristics of spontaneous and stimulated emission and the threshold parameters were determined. It was concluded from these data that, in the temperature range, 80–300°K the laser action in these screens occurred as a result of radiative recombination in a degenerate electron-hole plasma.

Received: 13.03.1978

English version:
Soviet Journal of Quantum Electronics, 1979, Volume 9, Issue 1, Pages 104–108
DOI: https://doi.org/10.1070/QE1979v009n01ABEH008704

Document Type: Article

UDC: 621.375.038.825

PACS: 42.55.Px

Language: Russian

Citation: V. I. Kozlovskiĭ, A. S. Nasibov, A. N. Pechenov, Yu. M. Popov, “Mechanism of stimulated emission from laser screens made of II-VI semiconductor compounds”, Kvantovaya Elektronika, 6:1 (1979), 189–196 [Sov J Quantum Electron, 9:1 (1979), 104–108]

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https://www.mathnet.ru/eng/qe/v6/i1/p189

This publication is cited in the following 4 articles:

Citing articles in Google Scholar: Russian citations, English citations
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