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Kvantovaya Elektronika, 1986, Volume 13, Number 12, Pages 2491–2496 (Mi qe8516)  

This article is cited in 4 scientific papers (total in 4 papers)

Features of lasing in active media utilizing NaF:Me2+ crystals containing F2+-like centers

N. A. Ivanov, V. D. Lokhnygin, A. A. Fomichev, V. M. Khulugurov
Abstract: A study of NaF crystals doped with bivalent metals Ca, Mg, or Mn revealed the presence of F aggregate centers comprising an F2 center adjacent to an Me2+-υc impurity-vacancy dipole. Excitation by laser radiation in the absorption band of these centers ionized them to F2+(Me) centers. Efficient lasing tunable within the luminescence band of the F2+(Me) centers was achieved. In this case, the F2+(Me) centers were generated and excited by radiation of the same wavelength (λ = 659 nm). The lasing characteristics of this laser were studied.
Received: 21.10.1985
English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 12, Pages 1645–1648
DOI: https://doi.org/10.1070/QE1986v016n12ABEH008516
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.2
PACS: 42.55.Rz, 42.60.By, 42.60.Lh, 42.60.Fc, 42.60.Jf, 42.70.Hj
Language: Russian


Citation: N. A. Ivanov, V. D. Lokhnygin, A. A. Fomichev, V. M. Khulugurov, “Features of lasing in active media utilizing NaF:Me2+ crystals containing F2+-like centers”, Kvantovaya Elektronika, 13:12 (1986), 2491–2496 [Sov J Quantum Electron, 16:12 (1986), 1645–1648]
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  • https://www.mathnet.ru/eng/qe/v13/i12/p2491
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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