Propagation of high-power light pulses through semiconductors under interband interaction conditions

A theoretical investigation was made of the propagation of a high-power light pulse in a semiconductor under interband absorption conditions. A self-consistent system of equations was obtained for the field and the medium allowing for nonequilibrium particle relaxation processes. Allowance was also made for the influence of a strong pulse field on the intensity of such processes. Analytic and numerical investigation of various interesting cases permit comparison between theory and experiment.