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Kvantovaya Elektronika, 1978, Volume 5, Number 1, Pages 211–214 (Mi qe8454)  

Brief Communications

Radiative characteristics of a single-channel GaAs injection laser

V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ
Abstract: An investigation was made of the radiative characteristics of gallium arsenide laser diodes with a luminous region several microns in size. A special feature of these lasers was that they emitted a single longitudinal mode in a wide range of injection currents at 77°K. The maximum output power in this mode was ~50 mW in the cw regime. The output was highly coherent: the coherence length exceeded 10 m. A comparison was made of the energy characteristics of the lasers with active regions 6 and 200 μ wide, operating in the single-frequency regime. Single-channel lasers were found to be 10 times as effective in conversion of electrical energy into coherent radiation than wide diodes.
Received: 15.07.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 1, Pages 130–132
DOI: https://doi.org/10.1070/QE1978v008n01ABEH008454
Document Type: Article
UDC: 621.382.3
PACS: 42.55.Px
Language: Russian


Citation: V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ, “Radiative characteristics of a single-channel GaAs injection laser”, Kvantovaya Elektronika, 5:1 (1978), 211–214 [Sov J Quantum Electron, 8:1 (1978), 130–132]
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    Квантовая электроника Quantum Electronics
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