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Kvantovaya Elektronika, 1978, Volume 5, Number 1, Pages 148–150 (Mi qe8417)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Influence of surface recombination on stimulated emission threshold of semiconductor lasers

E. F. Loshchenkova, A. G. Molchanov, Yu. M. Popov
Full-text PDF (449 kB) Citations (2)
Abstract: A theoretical study is made of the influence of diffusion and surface recombination on the spatial distribution of nonequilibrium carriers with depth and on the optical gain of an electron-beam-excited semiconductor laser. The dependences of the threshold current on the diffusion length, surface recombination velocity, and thickness of the "dead" layer are found for the longitudinal and transverse electron-beam pumping configurations.
Received: 20.05.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 1, Pages 82–83
DOI: https://doi.org/10.1070/QE1978v008n01ABEH008417
Document Type: Article
UDC: 621.378.325
PACS: 42.55.Px
Language: Russian


Citation: E. F. Loshchenkova, A. G. Molchanov, Yu. M. Popov, “Influence of surface recombination on stimulated emission threshold of semiconductor lasers”, Kvantovaya Elektronika, 5:1 (1978), 148–150 [Sov J Quantum Electron, 8:1 (1978), 82–83]
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  • https://www.mathnet.ru/eng/qe/v5/i1/p148
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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