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Kvantovaya Elektronika, 1978, Volume 5, Number 1, Pages 146–147 (Mi qe8416)  

Brief Communications

Electro-optic phase modulation of radiation in thin-film epitaxial GaAsP waveguides

Yu. A. Bykovskiĭ, E. N. Vigdorovich, V. L. Smirnov, V. L. Oplesnin, L. F. Plavich, A. V. Shmal'ko
Abstract: An investigation was made of electro-optic phase modulation of laser radiation in thin-film epitaxial GaAsP waveguides. Radiation of 0.6328 and 1.15 μ wavelengths was phase-modulated at frequencies up to 5 MHz in a GaAs0.15P0.85, thin-film (2.9 μ thick) waveguide. The control voltages per 1 rad of phase shift were of the order of 7 and 13 V, respectively, at the two wavelengths.
Received: 13.06.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 1, Pages 80–81
DOI: https://doi.org/10.1070/QE1978v008n01ABEH008416
Document Type: Article
UDC: 621.373.826:621.396
PACS: 42.80.Ks
Language: Russian


Citation: Yu. A. Bykovskiĭ, E. N. Vigdorovich, V. L. Smirnov, V. L. Oplesnin, L. F. Plavich, A. V. Shmal'ko, “Electro-optic phase modulation of radiation in thin-film epitaxial GaAsP waveguides”, Kvantovaya Elektronika, 5:1 (1978), 146–147 [Sov J Quantum Electron, 8:1 (1978), 80–81]
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