Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1978, Volume 5, Number 1, Pages 99–103 (Mi qe8396)  

This article is cited in 4 scientific papers (total in 4 papers)

Two-photon absorption resonance in the presence of transit effects

E. V. Baklanov, B. Ya. Dubetskiĭ
Full-text PDF (595 kB) Citations (4)
Abstract: An analysis is made of the influence of transit effects on the profile of a two-absorption line of a gas interacting with a standing wave field. It is shown that in the case of a confined light beam the resonance width is governed by the transit times of atoms across the beam. When two light beams separated by a large distance are present, there is an additional resonance line of width which is the reciprocal of the transit time between the beams. This resonance is analyzed allowing for the relaxation of atomic levels.
Received: 18.02.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 1, Pages 51–53
DOI: https://doi.org/10.1070/QE1978v008n01ABEH008396
Document Type: Article
UDC: 535.342
PACS: 42.65.Gv
Language: Russian


Citation: E. V. Baklanov, B. Ya. Dubetskiĭ, “Two-photon absorption resonance in the presence of transit effects”, Kvantovaya Elektronika, 5:1 (1978), 99–103 [Sov J Quantum Electron, 8:1 (1978), 51–53]
Linking options:
  • https://www.mathnet.ru/eng/qe8396
  • https://www.mathnet.ru/eng/qe/v5/i1/p99
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:177
    Full-text PDF :164
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024